Description
Inelastic processes in low-energy Si+H and Si^+^+H^-^ collisions are treated for the states from the ground state up to the ionic state, in order to provide rate coefficients needed for non-LTE modeling of Si in cool stellar atmospheres. Electronic molecular structure is determined using a recently proposed model approach based on an asymptotic method in combination with available ab initio potentials. Nonadiabatic nuclear dynamics are treated by means of a combination of multichannel formulas and the branching-probability-current method, based on the Landau-Zener model for nonadiabatic transition probabilities.
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